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EV-Type
Single IGBT dual switch (~ ⅓ of our ED-Type)
Record current density 1.2kV, 2x250A on 45x45x4mm3
–Very low inductance <10nH à significant lower over-voltage
–Lowest contact resistance <0.9mΩ， Optimal use of low VCEsat IGBT
–Low Rth and excellent cycling capability thanks to rugged SiN Substrate
–Integrated Thermistor